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| SUP90N08-4M8P Vishay Siliconix N-Channel 75-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) () 0.0048 at VGS = 10 V 0.006 at VGS = 8 V ID (A) 90d 90 d FEATURES Qg (Typ) 105 * TrenchFET(R) Power MOSFET * 175 C Junction Temperature * 100 % UIS Tested RoHS COMPLIANT APPLICATIONS * Power Supply - Half-Bridge - Secondary Synchronous Rectification TO-220AB * Industrial D G GDS Top View Ordering Information: SUP90N08-4M8P-E3 (Lead (Pb)-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 C) Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range a Symbol VDS VGS TC = 25 C TC = 70 C ID IDM IAS L = 0.1 mH TC = 25 C TA = 25 Cc EAS PD TJ, Tstg Limit 75 20 90d 90d 240 70 245 300 b Unit V A mJ W C 3.75 - 55 to 175 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) Junction-to-Case (Drain) Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Package limited. Document Number: 74281 S-71663-Rev. C, 06-Aug-07 www.vishay.com 1 c Symbol RthJA RthJC Limit 40 0.5 Unit C/W SUP90N08-4M8P Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) VDS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 75 V, VGS = 0 V VDS = 75 V, VGS = 0 V, TJ = 125 C VDS = 75 V, VGS = 0 V, TJ = 150 C VDS 10 V, VGS = 10 V VGS = 10 V, ID = 20 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 20 A, TJ = 125 C VGS = 8 V, ID = 20 A, TJ = 150 C VGS = 8 V, ID = 20 A Forward Transconductance Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Charge Gate-Drain Chargec Gate Resistance Turn-On Delay Time Rise Timec Turn-Off Delay Time Fall Timec Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge c c c a Symbol Test Conditions Min 75 2 Typ Max Unit 4 250 1 50 250 V nA A A 70 0.004 0.0048 0.0096 0.0106 0.0046 58 6460 0.006 gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf IS ISM VSD trr IRM(REC) Qrr VDS = 15 V, ID = 20 A S VGS = 0 V, VDS = 40 V, f = 1 MHz 571 275 105 160 pF VDS = 30 V, VGS = 10 V, ID = 85 A f = 1 MHz VDD = 30 V, RL = 0.4 ID 85 A, VGEN = 10 V, Rg = 1 32 28 1.3 23 17 34 8 2.6 35 26 52 15 85 240 nC ns Source-Drain Diode Ratings and Characteristics (TC = 25 C)b A V ns A C IF = 30 A, VGS = 0 V IF = 75 A, di/dt = 100 A/s 0.85 68 2.6 88 1.5 100 4 132 Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74281 S-71663-Rev. C, 06-Aug-07 SUP90N08-4M8P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 120 VGS = 10 thru 6 V 100 I D - Drain Current (A) 100 I D - Drain Current (A) 120 80 80 60 60 40 5V 20 40 TC = 125 C 20 25 C - 55 C 0 0 1 2 3 4 5 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 150 TC = - 55 C 25 C 90 125 C 60 r DS(on) - On-Resistance ( ) 120 gfs - Transconductance (S) 0.012 0.015 Transfer Characteristics 0.009 0.006 VGS = 8 V 30 0.003 VGS = 10 V 0 0 10 20 30 40 50 60 0.000 0 20 40 60 80 100 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Transconductance 0.020 ID = 20 A r DS(on) - On-Resistance ( ) 0.016 C - Capacitance (pF) 6560 8200 On-Resistance vs. Drain Current Ciss 0.012 125 C 0.008 4920 3280 0.004 25 C 1640 Coss 0.000 4.0 0 5.2 6.4 7.6 8.8 10.0 0 Crss 15 30 45 60 75 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) On-resistance vs. Gate-to-Source Voltage Document Number: 74281 S-71663-Rev. C, 06-Aug-07 Capacitance www.vishay.com 3 SUP90N08-4M8P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 10 ID = 85 A V GS - Gate-to-Source Voltage (V) 8 VDS = 30 V r DS(on) - On-Resistance (Normalized) 1.7 10 V 1.4 2.0 ID = 20 A 6 VDS = 60 V 4 1.1 2 0.8 0 0 23 46 69 92 115 0.5 - 50 - 25 0 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge 100 0.7 150 C V GS(th) Variance (V) On-Resistance vs. Junction Temperature I S - Source Current (A) 10 0.2 ID = 5 mA - 0.3 1.0 - 0.8 0.1 25 C - 1.3 ID = 250 A - 1.8 0.01 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 - 2.3 - 50 - 25 0 25 50 75 100 125 150 175 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (C) Source-Drain Diode Forward Voltage 100 ID = 1 mA 95 V(BR)DSS (normalized) 100 Threshold Voltage IDAV (A) 90 150 C 10 25 C 85 80 75 - 50 - 25 0 25 50 75 100 125 150 175 1 0.00001 0.0001 0.001 0.01 TAV (sec) 0.1 1.0 TJ - Junction Temperature (C) Drain Source Breakdown vs. Junction Temperature www.vishay.com 4 Single Pulse Avalanche Current Capability vs. Time Document Number: 74281 S-71663-Rev. C, 06-Aug-07 SUP90N08-4M8P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 180 1000 *Limited by r DS(on) 144 I D - Drain Current (A) I D - Drain Current (A) 100 s 100 108 Package Limited 1 ms 10 10 ms 100 ms dc 1 TC = 25 C Single Pulse 72 36 0 0 25 50 75 100 125 150 0.1 0.1 *VGS 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified TC - Case Temperature (C) Maximum Drain Current vs. Case Temperature Safe Operating Area 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74281. Document Number: 74281 S-71663-Rev. C, 06-Aug-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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